808nm 200mWの高い発電の半導体レーザー
【商品名】
808nm 200mWの高い発電の半導体レーザー
【規格】
密封されたサイズ: TO-18 (5.6mm)
働く温度(°c): - 10 ~ +50
出力: CW 200mW
波長: 808nm
Absolute Maximum Ratings(Tc=25℃)
Parameter
|
Symbols
|
Ratings
|
Units
|
Optical Output
|
Po
|
200
|
mW
|
Reverse Voltage
|
Vr
|
2
|
V
|
Storage Temperature
|
Tstg
|
0~85
|
℃
|
Electrical and Optical Characteristics(Tc=25℃)
Parameter
|
Symbols
|
Conditions
|
Min
|
Typ
|
Max
|
Units
|
Threshold Current
|
Ith
|
-
|
-
|
70
|
80
|
mA
|
Operating Current
|
Iop
|
Po=200mw
|
-
|
270
|
280
|
mA
|
Operating Voltage
|
Vop
|
-
|
-
|
1.9
|
2.3
|
Volts
|
Slope Efficiency
|
η
|
150mw-50mw
|
-
|
1
|
-
|
mW/mA
|
I150mw-I50mw
|
Beam Divergence
(FWHM)
|
θ∥
|
Po=200mw
|
-
|
12
|
-
|
deg
|
θ⊥
|
Po=200mw
|
-
|
40
|
-
|
deg
|
Parallel deviation angle
|
⊿θ∥
|
Po=200mw
|
-
|
-
|
±3
|
deg
|
Prependicular deviation angle
|
⊿θ⊥
|
Po=200mw
|
-
|
-
|
±3
|
deg
|
Lasing Wavelength
|